Please use this identifier to cite or link to this item:
http://repositorio.ufla.br/jspui/handle/1/40380
Title: | Monitoring the applied strain in monolayer gallium selenide through vibrational spectroscopies: a first-principles investigation |
Keywords: | Lattice dynamics Optoelectronics 2-dimensional systems Chalcogenides Flexible electronics Semiconductors Dinâmica da estrutura Optoeletrônica Sistemas bidimensionais Eletrônica flexível Semicondutores |
Issue Date: | Feb-2019 |
Publisher: | American Physical Society (APS) |
Citation: | LONGUINHOS, R.; SOARES, J. R. Monitoring the Applied Strain in Monolayer Gallium Selenide through Vibrational Spectroscopies: A First-Principles Investigation. Physical Review Applied, New York, v. 11, n. 2, Feb. 2019. Não paginado. |
Abstract: | Monolayer gallium selenide (GaSe) is a promising material for nanoscale electronic, spintronic, and optoelectronic applications. Its electrical conductivity and optical properties were reported to be largely tuned by strain engineering, where the assessment of the applied strain is crucial. In this work, we apply first-principles calculations to unveil the strain-induced phonon frequency shifts in monolayer GaSe, showing its promising application as a strain probe. Furthermore, we find that the uniaxial-, biaxial-, and shear-strain onset for strain-induced lattice instability are 22%, 16%, and 5%, respectively, indicating it could be used as a handle in flexible electronics. We find monolayer GaSe to be about 2 times softer than monolayer MoS2 and 4 times softer than monolayer graphene, and that its Raman fingerprint modes can resolve strain values in the low-strain regime up to 1.0%. These results suggest its use as a strain sensor in fragile applications. Our results provide insight into the use of Raman and infrared spectroscopies to probe the strain in monolayer GaSe, which is of paramount importance for further developments in strain engineering and flexible electronics in GaSe-based devices. |
URI: | https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.11.024012 http://repositorio.ufla.br/jspui/handle/1/40380 |
Appears in Collections: | DFI - Artigos publicados em periódicos |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.