Please use this identifier to cite or link to this item: http://repositorio.ufla.br/jspui/handle/1/39268
Title: Free-standing boron doped CVD diamond films grown on partially stabilized zirconia substrates
Keywords: Diamond film
p-Type doping chemical vapor deposition
Raman spectroscopy
Zirconia substrates
Filme de diamante
Espectroscopia Raman
Substratos de zircônia
Issue Date: 18-Nov-2010
Publisher: Elsevier
Citation: BRANDAO, L. E. V. de S.; PIRES, R. F.; BALZARETTI, N. M. Free-standing boron doped CVD diamond films grown on partially stabilized zirconia substrates. Spectroscopy, [S. l.], v. 54, n. 2, p. 84-88, 18 Nov. 2010.
Abstract: Boron doped diamond films have been grown adhered to silicon substrates by chemical vapor deposition using boron containing gases. In this work it was shown that it is possible to grow free-standing boron doped CVD diamond films on partially stabilized zirconia substrates using boron powder as the source for doping. Results from Raman spectroscopy confirmed the boron incorporation with concentration up to ∼1020 cm−3. X-ray diffraction and scanning electron microscopy showed that the effect of boron incorporation in the microstructure of the diamond film is negligible. The measurement of the resistivity as a function of temperature confirmed the semiconductor behavior, as expected for p-type diamond.
URI: https://www.sciencedirect.com/science/article/pii/S0924203110000494#!
http://repositorio.ufla.br/jspui/handle/1/39268
Appears in Collections:DEG - Artigos publicados em periódicos

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