Use este identificador para citar ou linkar para este item: http://repositorio.ufla.br/jspui/handle/1/48012
Registro completo de metadados
Campo DCValorIdioma
dc.creatorAraujo, Francisco D. V.-
dc.creatorOliveira, Victor V.-
dc.creatorGadelha, Andreij C.-
dc.creatorCarvalho, Thais C. V.-
dc.creatorFernandes, Thales F. D.-
dc.creatorSilva, Francisco W. N.-
dc.creatorLonguinhos, R.-
dc.creatorRibeiro-Soares, Jenaina-
dc.creatorJorio, Ado-
dc.creatorSouza Filho, Antonio G.-
dc.creatorAlencar, Rafael S.-
dc.creatorViana, Bartolomeu C.-
dc.date.accessioned2021-09-01T17:25:08Z-
dc.date.available2021-09-01T17:25:08Z-
dc.date.issued2020-09-
dc.identifier.citationARAUJO, F. D. V. et al. Temperature-dependent phonon dynamics and anharmonicity of suspended and supported few-layer gallium sulfide. Nanotechnology, v. 31, n. 49, p. 495702, 2020. DOI: https://doi.org/10.1088/1361-6528/abb107.pt_BR
dc.identifier.urihttps://doi.org/10.1088/1361-6528/abb107pt_BR
dc.identifier.urihttp://repositorio.ufla.br/jspui/handle/1/48012-
dc.description.abstractPhonons play a fundamental role in the electronic and thermal transport of 2D materials which is crucial for device applications. In this work, we investigate the temperature-dependence of A$^1_{1 \mathrm{g}}$ and A$^2_{1 \mathrm{g}}$ Raman modes of suspended and supported mechanically exfoliated few-layer gallium sulfide (GaS), accessing their relevant thermodynamic Grüneisen parameters and anharmonicity. The Raman frequencies of these two phonons soften with increasing temperature with different $\theta = \partial\omega/\partial T$ temperature coefficients. The first-order temperature coefficients θ of A$^2_{1 \mathrm{g}}$ mode is ∼ −0.016 cm−1/K, independent of the number of layers and the support. In contrast, the θ of A$^1_{1 \mathrm{g}}$ mode is smaller for two-layer GaS and constant for thicker samples (∼ −0.006 2 cm−1 K−1). Furthermore, for two-layer GaS, the θ value is ∼ −0.004 4 cm−1 K−1 for the supported sample, while it is even smaller for the suspended one (∼ −0.002 9 cm−1 K−1). The higher θ value for supported and thicker samples was attributed to the increase in phonon anharmonicity induced by the substrate surface roughness and Umklapp phonon scattering. Our results shed new light on the influence of the substrate and number of layers on the thermal properties of few-layer GaS, which are fundamental for developing atomically-thin GaS electronic devices.pt_BR
dc.languageenpt_BR
dc.publisherIOP Publishing Ltdpt_BR
dc.rightsrestrictAccesspt_BR
dc.sourceNanotechnologypt_BR
dc.subjectPost-transition metalpt_BR
dc.subjectGallium sulfidept_BR
dc.subject2D materialspt_BR
dc.subjectTemperature-dependentpt_BR
dc.subjectfew-layer GaSpt_BR
dc.subjectMetal pós-transiçãopt_BR
dc.subjectSulfeto de gálio de poucas camadaspt_BR
dc.subjectMateriais bidimensionaispt_BR
dc.subjectRaman spectroscopypt_BR
dc.subjectGrüneisen parameterpt_BR
dc.titleTemperature-dependent phonon dynamics and anharmonicity of suspended and supported few-layer gallium sulfidept_BR
dc.typeArtigopt_BR
Aparece nas coleções:DFI - Artigos publicados em periódicos

Arquivos associados a este item:
Não existem arquivos associados a este item.


Os itens no repositório estão protegidos por copyright, com todos os direitos reservados, salvo quando é indicado o contrário.